3.2.12 · D4CMOS Circuit Design

Exercises — Domino logic

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Before we start, one shared picture that every problem below leans on.

Figure — Domino logic

Level 1 — Recognition

L1.1

State, in one word each, the two clock phases of a domino gate and what equals in each.

Recall Solution

Precharge () and Evaluate (). Why: when the precharge PMOS (gate driven by ) is ON and pulls up; when that PMOS is OFF and the bottom evaluate NMOS (also gated by ) is ON, opening a possible discharge path.

L1.2

A domino gate has just finished precharge. What is the logic level at the dynamic node , and what is the logic level at the output ?

Recall Solution

, and . Why: the PMOS charged to ; the static inverter flips it, so the usable output starts at 0. This "start-LOW" is the whole reason cascading is safe.

L1.3

Which single component distinguishes a domino gate from a plain dynamic gate?

Recall Solution

A static CMOS inverter on the dynamic node . Domino = Dynamic + Inverter. Everything monotonic about domino follows from that inverter negating the naturally-falling node .


Level 2 — Application

L2.1

Build the PDN for a domino gate computing . How many NMOS, and how arranged?

Recall Solution

Three NMOS in series (A, then B, then C) between node and the evaluate transistor. Why: the output is non-inverting, so the PDN must conduct exactly when , i.e. when . Series NMOS conduct only when all gates are HIGH — that is logical AND. So a 3-input AND needs 3 series NMOS.

L2.2

Build the PDN for a domino gate computing (OR).

Recall Solution

Two NMOS in parallel (A and B), both between and the evaluate transistor. Why: parallel NMOS conduct if any gate is HIGH = logical OR. discharges (so rises to 1) when or . This matches . See Pull-Down Network Design for the general series=AND / parallel=OR rule.

L2.3

For in a domino AND gate , trace and through precharge and evaluate.

Recall Solution
  • Precharge (): PMOS on ⇒ , .
  • Evaluate (): the series NMOS are (on)–(off). Because is off the chain is broken, no discharge path. holds HIGH on , so stays .
  • Result . ✓ Correct.

L2.4

Give the truth-table output for the two-input domino OR () across all four input combinations.

Recall Solution
conducts?
0 0 no 1 0
0 1 yes 0 1
1 0 yes 0 1
1 1 yes 0 1

Matches exactly.


Level 3 — Analysis

L3.1

Explain precisely why two plain dynamic gates in a row can fail, and why swapping them for domino gates fixes it. Use the phrase "monotonically rising."

Recall Solution

Failure: after precharge, a plain dynamic output sits HIGH. At the instant evaluate begins, the downstream gate sees that HIGH on its PDN input before the upstream gate has decided to pull it LOW. A HIGH turns the downstream NMOS ON, discharging its dynamic node early. Since dynamic nodes are floating (), lost charge cannot be recovered — a permanent false evaluation (a race). Fix: a domino output starts LOW and is monotonically rising (can only go 0→1 during evaluate). So every downstream PDN input begins LOW ⇒ those transistors are OFF ⇒ no early discharge. A downstream node only discharges after an upstream output rises — the safe, ordered "falling dominoes" ripple.

L3.2 (numeric)

Node has at . When evaluate begins, shares charge with an internal PDN node of initially at (no full discharge path). Compute the settled voltage on and the drop .

Recall Solution

Charge is conserved (isolated group of capacitors): After sharing, both caps sit at a common voltage on total cap : Meaning: sagged by 0.24 V (20% of ). If the inverter's switching threshold sits below this particular case is safe, but bigger would sink it further — see the plot below.

Figure — Domino logic

L3.3

From the same setup, find the internal cap that would drag down to exactly the inverter threshold (half of ). What does mean physically?

Recall Solution

Set and solve: With : Physical meaning: when the internal node's capacitance equals 's capacitance, the shared charge splits evenly and falls to exactly half of — right at the threshold, the danger point where may flip falsely. This is why we add a keeper.


Level 4 — Synthesis

L4.1

Design a full domino gate for . List every transistor, its gate signal, and where it connects.

Recall Solution

The PDN must conduct when : that is or and .

  • Precharge PMOS: , gate .
  • PDN top: NMOS and NMOS in parallel (the OR), between and an internal node .
  • PDN bottom: NMOS in series below that parallel pair, from to the evaluate NMOS.
  • Evaluate NMOS: from bottom of PDN to ground, gate .
  • Static inverter: .

Why this arrangement: series = AND, parallel = OR (from L2). is the parallel group; ANDing with means the whole group must sit in series with . discharges only when the parallel group and conduct — exactly .

L4.2

You need (an inverter's function) as one stage of a domino chain feeding another domino gate. Can a single domino gate produce it? If not, what must you do?

Recall Solution

No. A domino output is non-inverting: it starts LOW and can only rise. An inverting function would have to output HIGH when — but at evaluate start is LOW, and if never rises there is no mechanism to drive up to 1 through the normal PDN (the PDN pulls down = up only when inputs are HIGH). So plain domino cannot invert. What to do: use dual-rail domino (compute both and on complementary rails), or NP / Zipper Domino which alternates n- and p-type dynamic stages, or push the inversion into a static gate at the boundary. See the parent note's "big limitation."

L4.3

Add a keeper to the L4.1 gate. State the keeper's type, its gate signal, its strength, and the exact scenario it protects.

Recall Solution
  • Type: a PMOS, connected (parallel to the precharge PMOS).
  • Gate signal: (the inverter output). When is HIGH, , so the keeper PMOS is ON and holds up. When falls, rises to 1, turning the keeper OFF so it does not fight a legitimate discharge.
  • Strength: weak (small W/L). It must be overpowered by the PDN during a true evaluation, only trickling charge otherwise.
  • Protects: the case where should stay HIGH but is threatened by leakage or charge sharing (L3). The keeper refills the tiny lost charge so stays above the inverter threshold and doesn't false-flip.

Level 5 — Mastery

L5.1 (numeric, staged charge sharing)

Node (, at ) shares with two internal nodes and , both initially at , all suddenly connected in parallel with (deepest series chain, all internal caps exposed). Find and . Compare with the single-node L3.2 answer.

Recall Solution

Conserved charge is unchanged (only started charged): Total capacitance is now : Compared to L3.2 (single node, , ): more exposed internal capacitance ⇒ deeper sag. The general rule: ; every extra shared farad pulls lower. Deep, tall PDN stacks are the most charge-sharing-prone — a key argument for precharging internal nodes too (see Clocking and Precharge Schemes).

L5.2 (analysis of a limiting case)

What happens to in the charge-sharing formula as an internal capacitance (a huge exposed internal node)? And as ? Interpret both.

Recall Solution

  • As : denominator , so . All of 's charge is swallowed by the enormous empty node; collapses to ~0 V and always false-flips to 1. Worst case.
  • As : . A negligible internal cap steals essentially nothing; stays at . Safe — no keeper stress.

So the whole danger scales with the ratio , exactly matching . Design guidance: keep large relative to internal nodes.

L5.3 (full synthesis + edge reasoning)

Design a domino stage for , then determine the worst-case charge-sharing internal node and argue which node needs precharging. Give the transistor-count of the PDN.

Recall Solution

Boolean → PDN. Conduct when :

  • (series) — top of chain from .
  • parallel — the OR group, in series below .
  • (series) — below the OR group, then to the evaluate NMOS.
  • PDN NMOS count = 4 (), plus 1 evaluate NMOS, plus 1 precharge PMOS, plus the 2 inverter transistors, plus a weak keeper PMOS.

Worst-case charge sharing. When discharges partially it can dump onto the internal node just below the first OFF transistor. If is ON but the group and decide the answer, the node between and the group (call it ) gets exposed and is deep in the stack (large parasitic cap from two series-connected transistor diffusions). That , holding the most exposed capacitance, causes the biggest sag by L5.2's ratio rule.

Fix: add a small precharge PMOS on (gate ) so starts at too — then when it connects to there's no empty capacitor to steal charge ( since both start high). Combine with the weak keeper on for leakage. This is the standard keeper + internal-precharge defense.


Recall One-line self-test recap (cover the right side)

Two clock phases and their ::: Precharge , Evaluate . Output level right after precharge ::: LOW (0). Property enabling cascading ::: Monotonically rising output (0→1 only). Charge-sharing final voltage of ::: . that drops to ::: . Keeper type, gate, strength ::: weak PMOS, gate , . Domino's fundamental limit ::: non-inverting only.

Connections

  • Domino Logic — parent topic these exercises drill
  • Dynamic CMOS Logic — the precharge/evaluate base
  • Static CMOS Logic — the inverter and the inverting-function fallback
  • Charge Sharing and Keepers — L3 and L5 rely on this directly
  • Clocking and Precharge Schemes — internal-node precharge timing (L5.3)
  • NP / Zipper Domino — the fix for the non-inverting limit (L4.2)
  • Pull-Down Network Design — series=AND / parallel=OR mapping used throughout