3.6.35 · D1 · Physics › Spacecraft Structures & Systems Engineering › Radiation effects — TID, SEE, displacement damage
Intuition Is poore topic ke peeche ek hi idea hai
Space mein chote-chote tez bullets (particles) bhari padi hain jo tumhare satellite ki electronics mein ghus jaati hain aur jahan rukti hain wahan energy dump karti hain. Woh dumped energy ya toh ek signal ko scramble karti hai, ya kisi transistor ke behave karne ka tarika shift karti hai, ya phir crystal ko physically tod deti hai — aur poora subject bas un teen outcomes ke teen naam hai.
Parent note ko bina atke padhne ke liye tumhe pehle bullets aur target ki vocabulary chahiye. Yeh page har symbol ko scratch se build karta hai. Hum koi bhi letter use nahi karte jab tak uski picture nahi bana lete.
Sab kuch shuru hota hai ek tez particle se jo ek solid material mein ghusta hai. Socho ek marble jise saaf jelly ke slab mein fire kiya gaya ho.
Matter ka ek chota tukda jo tezi se move karta hai: ek electron , ek proton , ya ek heavy ion (poora atomic nucleus, jaise iron, electrons se stripped). "Tez" matlab iske paas kinetic energy hai — motion ki energy.
Definition Material / target
Woh solid jisme particle ghusta hai. Electronics mein yeh zyaadatar silicon (Si, semiconductor) aur silicon dioxide (SiO₂, woh glassy insulator jo uske upar baith'ta hai) hota hai.
Humein dono kyun chahiye: radiation ke effects hamesha ek baat-cheet hote hain jo andar ghusta hai aur jo use hit karta hai ke beech. Koi ek badlo aur damage badal jaata hai.
Definition Energy — electron-volts (eV) mein measure ki jaati hai
Energy particle ka "kitna punch" hai. Hum ise electron-volts mein measure karte hain: 1 eV woh energy hai jo ek electron 1 volt ki battery cross karne par pick up karta hai. Bade multiples: 1 keV = 1 0 3 eV , 1 MeV = 1 0 6 eV .
Picture: ek bada, tez marble = zyaada eV. Space proton aksar "1 MeV " hota hai — punch ke ek million eV.
Har E ek alag "kiska energy?" sawaal ka jawab deta hai — isliye unke saath subscripts lagte hain.
Ek tez particle un atoms ke electrons ko drag karta hai jis se guzarta hai, kuch ko loose kar deta hai. Har free hua electron ek "hole" chod jaata hai — ek khali jagah jo positive charge ki tarah behave karti hai.
Definition Ionization aur electron–hole pair
Ionization = electron ko loose karna. Freed electron (negative) aur uska choda hua hole (positive) milke ek electron–hole pair hai. Yeh TID aur SEE ka core event hai.
E pair — ek pair banana ki energy
Particle ko ek electron free karne ke liye energy ki ek fixed amount "kharch" karni padti hai: silicon mein lagbhag 3.6 eV , SiO₂ mein lagbhag 18 eV . Toh agar woh E deposited dump karta hai, toh banaye gaye pairs ki sankhya roughly E deposited / E pair hoti hai.
Humein yeh kyun chahiye: yeh "peeche chodi gayi energy" aur "create hue charge" ke beech exchange rate hai — physics se circuit trouble tak ka bridge.
Definition Electric charge —
q , aur coulomb (C) / pico-coulomb (pC / fC)
Charge woh electrical "stuff" hai jo electrons aur holes carry karte hain. Sabse chota chunk q = 1.6 × 1 0 − 19 C hai (ek electron ka worth). Circuits thodi si maatraon se deal karte hain, isliye hum pico-coulombs 1 pC = 1 0 − 12 C aur femto-coulombs 1 fC = 1 0 − 15 C use karte hain.
Ek particle apni saari energy ek jagah dump nahi karta — woh ek trail chod'ta hai, apne path ke saath step by step energy khoota rehta hai.
d x d E — ek chote step mein khoi energy
Isko padho: "distance d x ke chote step mein khoi gayi thodi si energy d E ." Slash path ke saath loss ki rate hai. Agar tumhe har jagah loss-per-step pata hai, toh saare steps ko add karne se total milta hai:
E deposited = ∫ d x d E d s
∫ (integral) kyun, sirf multiplication kyun nahi?
Multiplication (loss-per-step × length) tabhi kaam karta hai jab loss-per-step har jagah same ho. Yeh usually nahi hota — particle slow hota jaata hai, isliye uska loss-per-step track ke saath badalta rehta hai. Symbol ∫ ("infinitely many tiny slices add karo") woh tool hai jo ek aisi quantity add karta hai jo continuously change karti rehti hai. Yahi sawaal yahan hai: andar chodi gayi total energy = saari choti losses ka sum. Koi doosra tool iska jawab nahi deta.
Definition LET — Linear Energy Transfer
LET d x d E ko material ki density ρ se divide karke milta hai, taaki yeh iss baat par depend na kare ki material kitna tightly packed hai. Units: MeV ⋅ cm 2 / mg . Bada LET = ek heavy, damaging bullet. Yeh ek number decide karta hai ki ek single event kitna bura hoga.
ρ (rho) — density
Ek material ke chunk mein kitna mass packed hai, g/cm 3 mein. Silicon ρ = 2.33 g/cm 3 hai. Yeh "per distance" ko "per mass" mein aur wapas convert karta hai.
Ek bullet ek event hai. Ek mission saalon mein trillions bullets hai. Dheere-dheere ike pile-up describe karne ke liye hum dose measure karte hain.
D rate — dose rate, aur running total TID
D rate dose per day hai. Running total Total Ionizing Dose hai:
TID ( t ) = ∫ 0 t D rate ( t ′ ) d t ′
Wahi integral idea §4 jaisi: rate tab badlti hai jab orbit dense aur thin radiation se guzarta hai, isliye hum multiply karne ki jagah tiny time-slices add karte hain.
cumulative hai; LET per-event hai
Inhe mix mat karo. LET batata hai ek particle kitna bura hai (SEE). Dose/TID batata hai poore mission mein kitna pile up hua (TID). Alag sawaal, alag symbols.
TID aur SEE dono ek MOSFET naam ke switch par attack karte hain. Tumhe uske teen numbers chahiye.
Definition Threshold voltage
V th
MOSFET ek electrical switch hai. V th woh voltage hai jo tumhe apply karni padti hai jab tak woh on nahi ho jaata . Radiation se trapped charge is on-point ko shift karta hai; hum shift ko Δ V th likhte hain ("Δ " = "mein change").
Definition Oxide capacitance
C ox
Ek capacitor do conductors hain jiske beech insulator hai — yeh charge store karta hai. Uski capacitance C batata hai ki woh per volt kitna charge Q hold karta hai: Q = C V . Thickness t ox aur permittivity ϵ ox ki thin oxide layer ke liye:
C ox = t ox ϵ ox
Patla oxide ⇒ bada C ox . Yeh "trapped charge" ko "voltage shift" se Δ V th = − Q trap / C ox ke zariye link karta hai.
Definition Critical charge
Q crit
Woh sabse chota charge jo ek single particle ko stored bit flip karne ke liye dump karna padta hai: Q crit = C node ⋅ V crit . Chhote, modern chips mein tiny C node hota hai, isliye ek tiny charge unhe flip kar deta hai — isliye woh zyaada fragile hain.
Yeh predict karne ke liye ki errors kitni baar hoti hain humein "kitne particles, kitna bada target" ki language chahiye.
Φ (Phi)
Flux = har unit time mein ek square centimetre cross karne wale particles ki sankhya. Socho barish: flux raindrops per second hai jo zameen ke ek fixed patch par girte hain. Φ ( LET ) us barish ko split karta hai is hisaab se ki har drop kitna zor se lagta hai.
σ (sigma)
Hit hone ke liye device ka effective target area , cm 2 / bit mein. Socho "bullseye" — bada bullseye hit karna aasaan hai. Flux × cross-section multiply karo aur tumhe hit rate milti hai:
R = σ ⋅ Φ
Intuition "Cross-section" kyun, sirf "area" kyun nahi?
Asli transistor ke fuzzy edges hote hain — kuch hits use flip karte hain, kuch nahi, angle aur LET par depend karta hai. σ woh equivalent perfectly-sharp bullseye hai jo observed error rate reproduce karta hai. Yeh ek measured number hai, ruler measurement nahi.
Teesra mechanism alag hai: kabhi-kabhi bullet ek atomic nucleus se seedha takraa'ta hai aur poore atom ko uski lattice spot se knock out kar deta hai.
Definition Crystal lattice aur displacement
Lattice = silicon atoms ki woh neat repeating grid, jaise ek crate mein stack kiye hue santre. Ek displacement = ek santra apni slot se punch hoke nikal jaata hai, ek gap aur kahin ek loose santra chod'ta hai. Yeh defects charges trap karte hain aur dheere-dheere device barbaad kar dete hain (yahi Displacement Damage hai).
E recoil aur masses M p , M Si
Jab ek proton (mass M p ) silicon nucleus (mass M Si ) se takraata hai, toh woh recoil energy E recoil deta hai. Jo fraction transfer hota hai woh mass ratio aur scattering angle θ par depend karta hai — yeh ordinary billiard-ball collision physics hai, bas atoms ke saath.
Ionization: electron-hole pairs
Nuclear collision: recoil
Flux Phi and cross-section sigma
Vault mein yeh kahan hain: woh orbit jo Φ aur D rate set karta hai Spacecraft Orbits aur Van Allen Belts se aata hai; woh levels kaise badhte aur ghatte hain Solar Activity Cycles se aata hai; V th aur C ox ke peeche transistor physics Semiconductor Physics mein hai; upsets ka fix Error Correcting Codes mein hai; mission-level risk maths Reliability Engineering mein hai; power-side effects Photovoltaic Systems aur Power Budget ko touch karte hain. Yeh sab wapas parent mein feed hota hai, main radiation-effects note .
Jawab chhupao, zyaad se bol ke dekho, phir reveal karo.
Ek electron-volt (eV) physically kya matlab hai? Woh energy jo ek electron 1-volt ke difference ko cross karne par gain karta hai; 1 MeV = 1 0 6 eV .
Electron–hole pair kya hota hai? Ek freed electron (−) aur uske peeche choda gaya positive "hole"; ionization se banta hai.
Deposited energy E deposited kitne pairs create karta hai? Roughly E deposited / E pair , jahan Si mein E pair ≈ 3.6 eV hai.
d x d E ka matlab words mein kya hai?Particle ke track ke saath distance ke ek chote step mein khoi gayi energy.
E deposited ek product ki jagah integral kyun hai?Kyunki loss-per-step change hota hai jab particle slow hota hai, isliye tumhe kai chote slices sum karne padte hain.
LET kya hai aur uski unit kya hai? Linear Energy Transfer, d x d E per density; units MeV ⋅ cm 2 / mg .
Dose kya hai, aur rad vs Gray? Per kilogram material mein deposited ionizing energy; 1 Gy = 1 J/kg , 1 rad = 0.01 Gy .
V th kya hai?MOSFET on karne ke liye zaroori voltage; radiation ise Δ V th se shift karta hai.
Q crit kya hai?Woh minimum charge jo stored bit flip karta hai, Q crit = C node V crit .
Flux Φ aur cross-section σ ko multiply karne par kya milta hai? Error/hit rate R = σ Φ .
LET aur dose mein kya difference hai? LET = per-single-particle severity (SEE); dose/TID = mission-total pile-up (TID).
Displacement damage atomic level par kya hota hai? Ek nucleus crystal lattice se knock out ho jaata hai, defects chod'ta hai jo carriers trap karte hain.