WHAT we are asked: mobility is drift velocity per unit field — literally the ratio.
WHY this formula: μ=vd/E is the definition, no derivation needed.
μ=Evd=2000200=0.1V/mm/s=0.1V⋅sm2
The units simplify because V/mm/s=sm⋅Vm=V⋅sm2.
Answer:μ=0.1m2/V⋅s.
Recall Solution 1.2
WHAT: separate the "how many" factor from the "how easy" factor.
n=1022m−3 is a count per volume — that is how many carriers.
μ=0.135m2/V⋅s is the mobility — that is how easily each one moves (μ=qτ/m∗).
WHY it matters: they are independent knobs. Doping raises n but usually lowers μ. Both feed into σ=nqμ, but they answer different physical questions.
WHAT/WHY: direct use of vd=μE — mobility times field gives drift speed.
vd=μpE=0.048×5000=240m/sAnswer:vd=240m/s — still microscopic next to the ∼105m/s thermal jitter.
Recall Solution 2.2
WHY μ=qτ/m∗: more charge and more free-flight time both speed up drift; more mass resists it.
m∗=0.19×9.11×10−31=1.7309×10−31kgμ=m∗qτ=1.7309×10−31(1.6×10−19)(2×10−13)≈0.1849m2/V⋅sAnswer:μ≈0.185m2/V⋅s (≈ 1849 cm²/V·s).
Recall Solution 2.3
WHY σ=nqμ: it converts the microscopic trio (count, charge, ease-of-motion) into a lab-measurable conductivity.
σ=nqμn=(5×1021)(1.6×10−19)(0.12)=96S/mρ=σ1=961≈1.042×10−2Ω⋅mAnswer:σ=96S/m, ρ≈1.04×10−2Ω⋅m.
WHAT the proportionality means: μ1μ2=(T1T2)−3/2.
WHY it falls: hotter lattice → more phonons → more collisions → shorter τ → smaller μ=qτ/m∗. Extra heat energy does not help directed drift.
μ2=0.14×(300400)−3/2=0.14×(34)−1.5(34)1.5≈1.5396⇒μ2≈1.53960.14≈0.0909m2/V⋅sAnswer:μ≈0.091m2/V⋅s — a ~35% drop. See the falling curve below.
Recall Solution 3.2
WHY reciprocals add: scattering rates (1/τ) add because each mechanism is an extra independent way to get knocked off course. Since μ∝τ, the reciprocal mobilities add too.
μ1=0.201+0.051=5+20=25⇒μ=251=0.04m2/V⋅sAnswer:μ=0.04m2/V⋅s. Notice it is below the smaller of the two — the worst scatterer dominates, and having a second one can only make it worse.
Recall Solution 3.3
WHY the ratio is just masses: with q and τ equal, μ∝1/m∗, so μpμn=mn∗mp∗.
μn=0.26×9.11×10−31(1.6×10−19)(10−13)≈0.06753m2/V⋅sμp=0.49×9.11×10−31(1.6×10−19)(10−13)≈0.03583m2/V⋅sμpμn=0.260.49≈1.885Answer: electrons are ≈1.88× more mobile — lighter effective mass, same free time.
WHY both terms: electrons and holes drift in opposite directions, but they carry current in the same direction (opposite charge × opposite velocity), so their contributions add: σ=q(nμn+pμp).
nμn+pμp=(1.5×1016)(0.135)+(1.5×1016)(0.048)=1.5×1016×0.183=2.745×1015σ=q×2.745×1015=(1.6×10−19)(2.745×1015)=4.392×10−4S/mρ=σ1≈2277Ω⋅mAnswer:σ≈4.39×10−4S/m, ρ≈2.28×103Ω⋅m — a poor conductor, as expected for so few carriers.
Recall Solution 4.2
WHY this relation exists: the same random collisions that limit drift (μ) also drive spreading (D). Einstein's relation ties the two together through the thermal energy kT.
WHAT the group kT/q is: the thermal voltage, qkT=1.6×10−19(1.38×10−23)(300)≈0.025875V (≈ 26 mV at room temperature).
D=μ⋅qkT=0.135×0.025875≈3.493×10−3m2/sAnswer:D≈3.49×10−3m2/s.
Step A — invert ρ=1/(nqμ) to solve for n.σ=ρ1=0.011=100S/mn=qμnσ=(1.6×10−19)(0.135)100≈4.630×1021m−3WHY: conductivity is the reciprocal of resistivity; then σ=nqμ rearranges to give the count.
Step B — the doping penalty. At that n, extra ionized impurities scatter carriers, so μn falls to 0.10. Keeping the samen:
σtrue=nqμnew=(4.630×1021)(1.6×10−19)(0.10)≈74.07S/mρtrue=74.071≈1.35×10−2Ω⋅mAnswer: you aim for n≈4.63×1021m−3, but because mobility droops with doping, the real resistivity is higher than target: ρtrue≈0.0135Ω⋅m, not 0.01. Real designs iterate to correct for this.
Recall Solution 5.2
(a) Mobility — microscopic first:
m∗=0.25×9.11×10−31=2.2775×10−31kgμ=m∗qτ=2.2775×10−31(1.6×10−19)(1.5×10−13)≈0.10537m2/V⋅s(b) Field — voltage spread over the length: E=V/L=0.5/0.01=50V/m.
(c) Drift velocity — vd=μE=0.10537×50≈5.268m/s.
(d) Current density — J=nqvd=(2×1022)(1.6×10−19)(5.268)≈1.686×104A/m2.
(e) Current — I=JA=(1.686×104)(10−6)≈1.686×10−2A≈16.9mA.
Answer chain:μ≈0.105, E=50V/m, vd≈5.27m/s, J≈1.69×104A/m2, I≈16.9mA. Every arrow used exactly one boxed formula — this is the full pipeline from crystal microphysics to a number on an ammeter.
Recall Self-check: which formula answers which question?
Given τ and m∗, how do you get μ? ::: μ=qτ/m∗.
Given μ and E, how do you get vd? ::: vd=μE.
Given a voltage V over length L, what is E? ::: E=V/L (a field is volts per metre).
How do two scattering mechanisms combine? ::: Add reciprocals: 1/μ=1/μ1+1/μ2.
How do electron and hole contributions to σ combine? ::: They add: σ=q(nμn+pμp).