1.8.11Electromagnetism

Capacitance — parallel plate derivation, cylindrical, spherical

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The master recipe (HOW to derive any capacitor)

Every derivation below is the same four steps. Learn the recipe, not three formulas.

  1. Put charge +Q+Q on one conductor, Q-Q on the other.
  2. Find the field E\vec E between them — almost always via Gauss's law.
  3. Integrate to get the voltage: V=+Edl=EdlV = -\int_{-}^{+}\vec E\cdot d\vec l = \int \vec E\cdot d\vec l (taken from + plate to − plate gives a positive number).
  4. Divide: C=Q/VC = Q/V. The QQ cancels — proof it's pure geometry.

Gauss's law (the engine): EdA=Qencε0\displaystyle \oint \vec E\cdot d\vec A = \frac{Q_{\text{enc}}}{\varepsilon_0}.


1. Parallel plate

Setup: two plates area AA, separation dd, charge ±Q\pm Q, surface charge density σ=Q/A\sigma = Q/A.

Step 2 — field. Use a pillbox Gaussian surface straddling the positive plate. Flux only exits through the face inside the gap (field is ~0 in the conductor and outside an ideal capacitor): EAbox=σAboxε0    E=σε0=Qε0A.E\,A_{\text{box}} = \frac{\sigma A_{\text{box}}}{\varepsilon_0} \;\Rightarrow\; E = \frac{\sigma}{\varepsilon_0} = \frac{Q}{\varepsilon_0 A}. Why this step? The pillbox encloses charge σAbox\sigma A_{\text{box}}; the area cancels, giving a uniform field independent of position — that's the signature of an infinite-plane field.

Step 3 — voltage. Field is uniform, so the integral is just E×dE\times d: V=0dEdx=Ed=Qdε0A.V = \int_0^d E\,dx = E d = \frac{Q d}{\varepsilon_0 A}.

Step 4 — divide. C=QV=ε0Ad\boxed{C = \frac{Q}{V} = \frac{\varepsilon_0 A}{d}}

Figure — Capacitance — parallel plate derivation, cylindrical, spherical

2. Cylindrical (coaxial)

Setup: inner radius aa, outer radius bb, length LL (assume LbL \gg b so ends ignored). Charge +Q+Q on inner, Q-Q on outer; linear density λ=Q/L\lambda = Q/L.

Step 2 — field. Coaxial Gaussian cylinder radius rr (a<r<ba<r<b), length LL. By symmetry EE is radial and constant on the surface: E(2πrL)=Qε0    E(r)=Q2πε0Lr=λ2πε0r.E(2\pi r L) = \frac{Q}{\varepsilon_0}\;\Rightarrow\; E(r) = \frac{Q}{2\pi\varepsilon_0 L\, r} = \frac{\lambda}{2\pi\varepsilon_0 r}. Why this step? Only the curved side has flux; its area is 2πrL2\pi r L. The field falls as 1/r1/r.

Step 3 — voltage. Integrate from aa (high) to bb (low): V=abEdr=Q2πε0Labdrr=Q2πε0Lln ⁣ba.V = \int_a^b E\,dr = \frac{Q}{2\pi\varepsilon_0 L}\int_a^b \frac{dr}{r} = \frac{Q}{2\pi\varepsilon_0 L}\ln\!\frac{b}{a}. Why this step? dr/r=lnr\int dr/r = \ln r — the 1/r1/r field is exactly what produces a logarithm.

Step 4 — divide. C=2πε0Lln(b/a)\boxed{C = \frac{2\pi\varepsilon_0 L}{\ln(b/a)}}


3. Spherical

Setup: inner sphere radius aa, concentric outer shell radius bb, charge ±Q\pm Q.

Step 2 — field. Gaussian sphere radius rr (a<r<ba<r<b): E(4πr2)=Qε0    E(r)=Q4πε0r2.E(4\pi r^2) = \frac{Q}{\varepsilon_0}\;\Rightarrow\; E(r) = \frac{Q}{4\pi\varepsilon_0 r^2}. Why this step? Pure point-charge field between the shells; area is 4πr24\pi r^2, field falls as 1/r21/r^2.

Step 3 — voltage. V=abQ4πε0r2dr=Q4πε0[1r]ab=Q4πε0(1a1b)=Q4πε0baab.V = \int_a^b \frac{Q}{4\pi\varepsilon_0 r^2}\,dr = \frac{Q}{4\pi\varepsilon_0}\left[-\frac1r\right]_a^b = \frac{Q}{4\pi\varepsilon_0}\left(\frac1a-\frac1b\right) = \frac{Q}{4\pi\varepsilon_0}\,\frac{b-a}{ab}. Why this step? dr/r2=1/r\int dr/r^2 = -1/r; evaluating gives the (1/a1/b)(1/a-1/b) combination.

Step 4 — divide. C=4πε0abba\boxed{C = \frac{4\pi\varepsilon_0\, ab}{b-a}}


Recall Feynman: explain to a 12-year-old

A capacitor is two metal plates with a gap. You pump electrons onto one plate and pull them off the other. The crowded plate "pushes back" — the more crowded, the harder it pushes, and that push is the voltage. Capacitance is just how generous the plates are: a generous (high-CC) one swallows lots of electrons before pushing back hard. Big flat plates close together are super generous. The shape decides the generosity — not how much you stuff in.


Flashcards

What is the definition of capacitance?
C=Q/VC = Q/V; the charge stored per unit potential difference, depending only on geometry & dielectric.
Why does QQ cancel in every capacitance derivation?
Because EQE\propto Q and V=EdlQV=\int E\,dl\propto Q, so Q/VQ/V is independent of QQ — it's pure geometry.
Parallel-plate capacitance formula and the field between plates?
C=ε0A/dC=\varepsilon_0 A/d; field E=σ/ε0=Q/(ε0A)E=\sigma/\varepsilon_0=Q/(\varepsilon_0 A), uniform.
Why is parallel-plate field uniform?
Pillbox Gauss area cancels, giving E=σ/ε0E=\sigma/\varepsilon_0 independent of position (infinite-plane field).
Cylindrical (coaxial) capacitance?
C=2πε0Lln(b/a)C=\dfrac{2\pi\varepsilon_0 L}{\ln(b/a)}.
Why does the cylindrical result have a logarithm?
Field 1/r\propto 1/r, and dr/r=lnr\int dr/r=\ln r.
Spherical capacitance?
C=4πε0abbaC=\dfrac{4\pi\varepsilon_0 ab}{b-a}.
Capacitance of an isolated sphere of radius aa?
C=4πε0aC=4\pi\varepsilon_0 a (limit bb\to\infty).
Gauss-area used in each geometry?
Plane: AA; cylinder: 2πrL2\pi rL; sphere: 4πr24\pi r^2.
Effect of a dielectric κ\kappa?
Multiplies capacitance by κ\kappa: CκCC\to\kappa C (it weakens the field for the same charge).
At fixed QQ, what happens to energy when plates get closer?
CC increases, U=Q2/2CU=Q^2/2C decreases; plates attract.

Connections

Concept Map

depends only on

step 1 charge +-Q

gives

integrate to get

divide Q by V

applies to

applies to

applies to

uniform field E d

scales as A and 1/d

multiplies

Capacitance C = Q/V

Pure geometry constant

Gauss's law

4-step master recipe

Electric field E

Voltage V by integration

Parallel plate

Cylindrical

Spherical

Dielectric kappa

C = eps0 A / d

Hinglish (regional understanding)

Intuition Hinglish mein samjho

Dekho, capacitor ka funda bilkul simple hai: do conductors, aur unke beech mein charge +Q+Q aur Q-Q. Jab charge daalte ho, ek electric field banta hai, aur us field ki wajah se dono ke beech ek voltage VV aata hai. Magic ye hai ki VV hamesha QQ ke proportional hota hai — double charge, double field, double voltage. Isliye ratio C=Q/VC=Q/V ek constant ban jaata hai jo sirf shape aur material pe depend karta hai, kitna charge daala uspe nahi.

Teeno cases ka same recipe hai, alag formula ratne ki zaroorat nahi: pehle Gauss's law se EE nikalo, phir V=EdlV=\int E\,dl karo, phir C=Q/VC=Q/V. Parallel plate mein field uniform hota hai (E=σ/ε0E=\sigma/\varepsilon_0), to V=EdV=Ed, aur C=ε0A/dC=\varepsilon_0 A/d — bade plate aur kam gap matlab zyada capacitance. Cylindrical (coax cable) mein field 1/r1/r jaata hai, integrate karne pe log aata hai: C=2πε0L/ln(b/a)C=2\pi\varepsilon_0 L/\ln(b/a). Sphere mein field 1/r21/r^2, integrate pe (1/a1/b)(1/a-1/b) milta hai, to C=4πε0ab/(ba)C=4\pi\varepsilon_0 ab/(b-a).

Yaad rakho: har derivation mein QQ cancel ho jaata hai — yahi proof hai ki capacitance sirf geometry hai. Aur ek classic trap: mat sochna ki CC, QQ ya VV pe depend karta hai. Aur sphere ke liye seedha kQ/rkQ/r mat lagao — woh difference hai do shells ke beech ka. Limit check ke liye sphere mein bb\to\infty daalo to lone sphere ka C=4πε0aC=4\pi\varepsilon_0 a aata hai — bahut sundar. Exam mein recipe yaad rahegi to teeno question minute mein ho jaate hain.

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Connections