2.2.2 · Hardware › Doping & PN Junctions
Pure silicon ek bura conductor hai kyunki har valence electron ek bond mein lock hai. Agar hum ek aisa atom chupke se daalen jiske paas silicon se ek kam valence electron ho, toh woh ek missing bond — ek "hole" — chhod jaata hai. Woh hole ek positive mobile charge ki tarah behave karta hai jo crystal mein idhar-udhar ghoomta hai. Aisa bahut saare atoms daalo aur tumhare paas ek aisa material hoga jahan holes majority carriers hain : yahi hai p-type silicon.
Ek acceptor ek dopant hota hai jiske paas 3 valence electrons hote hain (Group III), silicon ke 4 se ek kam. Silicon mein classic acceptor boron (B) hai. Jab yeh lattice mein ek Si atom ki jagah le leta hai, uske teen bonds complete hote hain, lekin chautha bond ek electron se missing hota hai — ek hole create karta hai.
Definition p-type semiconductor
Ek semiconductor jo acceptors se doped hota hai, jisse holes majority carriers aur electrons minority carriers ban jaate hain. Ise "p" kaha jaata hai kyunki mobile carriers p ositive charges ki tarah behave karte hain.
"Acceptor" kyun? Kyunki woh empty bond ek neighbouring bond se electron accept karne mein khushi se tayaar hota hai. Jab aisa hota hai, hole simply wahaan move kar jaata hai jahan se woh electron aaya tha — toh charge conduction = holes ki hopping.
Silicon ke paas 4 valence electrons hain, jo neighbours ke saath 4 covalent bonds banate hain. Boron ke paas 3 hain.
Boron ek Si atom ko replace karta hai. Woh apne 3 electrons use karke 3 neighbours ke saath bond karta hai.
4th neighbouring Si abhi bhi ek electron bond ke liye offer karta hai, lekin boron ke paas use complete karne ke liye koi electron nahi hai → ek incomplete bond = ek hole .
Bahut kam energy (ek acceptor level valence band ke thoda upar) ek valence electron ko boron ke bond ko fill karne ke liye jump karne deta hai. Boron ek fixed negative ion (B − ) ban jaata hai, aur valence band mein ek free hole reh jaata hai.
Intuition Boron khud negative kyun hai lekin crystal neutral rehta hai?
Jab boron apna bond complete karne ke liye ek electron pakadta hai, boron ek net −1 charge gain kar leta hai (fixed, move nahi kar sakta). Jo hole usne release kiya woh +1 carry karta hai aur move karne ke liye free hai. Fixed −1 + mobile +1 = crystal overall neutral hai. Sirf mobile charge positive hai → conduction positive lagti hai.
Ab charge neutrality impose karo. Crystal mein koi net charge nahi hai, toh:
holes p + ionized donors N D + = electrons n + ionized acceptors N A −
Pure p-type doping ke liye, N D = 0 aur room temperature par saare acceptors ionized hain (N A − ≈ N A ):
p = n + N A
n = n i 2 / p substitute karo:
p = p n i 2 + N A ⇒ p 2 − N A p − n i 2 = 0
Quadratic solve karo (positive root lo, kyunki p > 0 ):
p = 2 N A + N A 2 + 4 n i 2
Worked example Example 1 — majority holes
Silicon N A = 1 0 16 cm − 3 boron se doped, n i = 1.5 × 1 0 10 cm − 3 . p aur n nikalo.
p ≈ N A = 1 0 16 cm − 3 .
Yeh step kyun? N A ≫ n i , toh term ≈ N A ; approximation valid hai.
n = n i 2 / p = ( 1.5 × 1 0 10 ) 2 /1 0 16 = 2.25 × 1 0 4 cm − 3 .
Yeh step kyun? Mass-action law n ko fix karta hai jab p pata ho.
Ratio p / n ≈ 4.4 × 1 0 11 → holes bilkul dominate karte hain.
Worked example Example 2 — lightly doped, quadratic check karo
N A = 2 × 1 0 10 cm − 3 , n i ke kareeb. Full formula use karo.
N A 2 + 4 n i 2 = ( 2 × 1 0 10 ) 2 + 4 ( 1.5 × 1 0 10 ) 2 = 4 × 1 0 20 + 9 × 1 0 20 = 1.3 × 1 0 21 = 3.6 × 1 0 10 .
Yeh step kyun? Yahaan N A , n i se ≫ nahi hai, toh hum n i drop nahi kar sakte.
p = ( 2 × 1 0 10 + 3.6 × 1 0 10 ) /2 = 2.8 × 1 0 10 cm − 3 .
n = n i 2 / p = 2.25 × 1 0 20 /2.8 × 1 0 10 = 8.0 × 1 0 9 cm − 3 .
Kyun: simple p ≈ N A se 2 × 1 0 10 milta — ~30% error. Lesson: jab doping intrinsic ke kareeb ho toh full formula use karo.
Worked example Example 3 — conductivity
p ≈ N A = 1 0 16 ke saath, hole mobility μ p ≈ 480 cm 2 / Vs , q = 1.6 × 1 0 − 19 C.
σ ≈ q p μ p = 1.6 × 1 0 − 19 ⋅ 1 0 16 ⋅ 480 = 0.77 ( Ω cm ) − 1
Yeh step kyun? Minority electrons q n μ n contribute karte hain jo ∼ 1 0 − 12 × smaller hai — negligible. Conduction ≈ sirf holes.
Common mistake "p-type silicon ka net positive charge hota hai."
Kyun sahi lagta hai: holes positive hain aur bahut saare hain, toh block positive hona chahiye.
Fix: har hole ek fixed negative acceptor ion B − se match hota hai. Net charge = 0. Sirf mobile carriers positive hain.
Common mistake "Boron extra positive protons add karta hai, wahi hole hai."
Kyun sahi lagta hai: "positive charge" nuclear lagta hai.
Fix: Hole ek bond mein electron ki absence hai, proton nahi. Boron ke paas simply ek kam valence electron hai; hole ek missing electron hai, ek emergent quasiparticle.
Common mistake "Zyada doping ka matlab hamesha
p = N A exactly hota hai."
Kyun sahi lagta hai: yeh approximation baar baar drill ki jaati hai.
Fix: p = N A sirf tab jab N A ≫ n i aur saare acceptors ionized hain (room T par shallow boron levels ke liye sach hai). Low temperature par acceptors "freeze out" kar jaate hain aur p < N A hota hai.
Recall Feynman: ek 12-saal ke bachche ko explain karo
Socho ek full parking lot jahan har gaadi (electron) parked hai aur move nahi kar sakti — yeh pure silicon hai, koi traffic nahi. Ab ek aisa special spot daalo jo ek gaadi ke liye designed hai lekin khaali chhod diya (yeh boron hai). Ek neighbouring gaadi us khaali spot mein slide kar jaati hai, lekin ab uska purana spot khaali hai. Khaali spot lot mein ghoomta rehta hai — aur ek khaali spot ko baayein move karna wahi hai jaise ek "positive nothing" daayein move kar rahi ho. Woh ghoomta hua khaali spot ek hole hai, aur yeh electricity ko flow karne deta hai. Boron ka poora kaam yahi hai — yeh ghoomne waale khaale spots create karta hai.
"Boron Borrows" — Boron ek electron borrow karta hai (accept karta hai), peeche ek positive hole chhod jaata hai. Group III → p ("three → h ole s"). Aur A cceptor = electron ki A bsence.
Boron ke paas silicon ki tulna mein kitne valence electrons hain? Boron 3, silicon 4 — ek kam, toh yeh ek hole create karta hai.
Hole kya hota hai? Ek covalent bond mein missing electron jo mobile positive charge ki tarah behave karta hai.
p-type material mein majority carriers kaun se hain? Holes (electrons minority carriers hain).
p-type crystal electrically neutral kyun hai? Har mobile positive hole ek fixed negative acceptor ion (B − ) se balance hota hai.
Mass-action law batao. n p = n i 2 thermal equilibrium par.
p-type silicon ke liye charge-neutrality equation likho. p = n + N A − (with N D = 0 ).
Hole concentration ka full expression? Jab N A ≫ n i ho toh approximate p aur n kya hain? p ≈ N A , n ≈ n i 2 / N A .
Boron ko "acceptor" kyun kaha jaata hai? Uska empty bond ek neighbour se electron accept karta hai, B − ban jaata hai aur ek mobile hole release karta hai.
p = N A kab break down karta hai?Jab N A , n i ke comparable ho, ya low T par jab acceptors freeze out ho jaate hain (fully ionized nahi).
p-type Si ki conductivity ka formula? σ ≈ q p μ p (holes dominate karte hain).
Intrinsic Semiconductors — doping se pehle baseline n = p = n i .
N-type doping with donor atoms (phosphorus) — mirror image; Group V, extra electron.
PN Junction Formation — p-type meets n-type; holes diffuse across.
Mass-Action Law and Carrier Statistics — n p = n i 2 ka source.
Fermi Level in Doped Semiconductors — p-type mein E F valence band ki taraf shift hota hai.
Drift and Diffusion Currents — holes actually current kaise carry karte hain.
acts as mobile positive charge
fixed minus cancels mobile plus
Pure silicon 4 valence e-
Acceptor level near valence band