Exercises — Fermi level and Fermi-Dirac distribution
Throughout we use the single formula from the parent note:
One reusable inversion (we derive it once, then just cite it):

The figure above is your map: the S-curve of , the half-way point at , and the two shaded regions (below = mostly full, above = mostly empty). Every exercise is really about reading one point off this curve.
Level 1 — Recognition
L1.1
At exactly , what is ? Does the answer depend on temperature?
Recall Solution
WHAT: substitute so . WHY: the definition of is "the energy where ", so this is a sanity check. No appears once , so the answer is at every temperature. On the figure, the curve passes through the point no matter how steep or smeared it is.
L1.2
Compute in eV at K, and at K (liquid nitrogen).
Recall Solution
WHAT: multiply eV/K by each temperature. WHY: is the width of the fuzzy region; you need it before any numeric . Colder → smaller → sharper step. This is the "freezing stadium" from the parent note.
L1.3
Without any calculation, state whether is greater than, equal to, or less than when is (a) below , (b) above .
Recall Solution
WHY it works by sign: is a decreasing function of .
- (a) denominator . Mostly full.
- (b) denominator . Mostly empty. Read this straight off the shaded regions of the figure.
Level 2 — Application
L2.1
Find for a state at .
Recall Solution
WHAT: here . WHY: the energy is given directly in units, so no need for eV. About empty — states a couple of above are largely vacant.
L2.2
At K ( eV), a state lies eV above . Find .
Recall Solution
WHAT: convert energy to first. WHY: the formula eats , not raw eV.
L2.3
Same state as L2.2, but now find the probability the state is empty.
Recall Solution
WHAT: empty probability . WHY: a state is either occupied () or not (); the two must sum to 1. This "" is the hole occupation probability — remember it, it drives L4.
Level 3 — Analysis
L3.1
A measurement finds for some state at K. Is the state above or below , and by how much (in eV)?
Recall Solution
WHAT: use the inversion . WHY: we're given and asked for position — the reverse direction. Negative → below . The state sits eV below the Fermi level. Makes sense: mostly filled () means below the water line.
L3.2
Show numerically the antisymmetry claim from the parent note: . Use .
Recall Solution
WHAT: compute both terms with and . WHY: verifying the symmetry that pairs "filled above" with "empty below". Sum . ✓ Exactly 1 — the curve is antisymmetric about .
L3.3
Compare the exact with its Boltzmann approximation at and . State the relative error for each.
Recall Solution
WHY compare: the parent note says Boltzmann is valid when ; this quantifies "how far is far enough". At : exact ; approx . Relative error — bad. At : exact ; approx . Relative error — good. Lesson: at the "+1" in the denominator still matters a lot; by it's negligible. See the figure below where the two curves peel apart near and merge far above it.

Level 4 — Synthesis
L4.1
In an intrinsic semiconductor at K, the conduction band edge sits eV above and the valence band edge sits eV below (mid-gap Fermi level, gap eV). (a) Find , the electron occupation probability at the conduction edge. (b) Find , the hole probability at the valence edge. (c) Comment on their relationship.
Recall Solution
WHY combine: electrons live at , holes live at ; this ties the distribution to the two carrier types of Intrinsic and extrinsic semiconductors. eV. (a) . Vanishingly small — the conduction band is nearly empty (as expected for an insulator-like intrinsic material). (b) . Hole probability (c) They are equal: . That's the antisymmetry (L3.2) applied at eV. Equal electron-top and hole-bottom probabilities is exactly why mid-gap gives (charge neutrality). See Chemical potential and equilibrium.
L4.2
Two states are separated by eV. State is at eV, state is at eV, both at K. Find the ratio .
Recall Solution
WHAT: compute each , then divide. WHY: ratios like this appear when comparing occupation across a small energy window. , . Notice — the ratio equals when both are near ? Only approximately; here it's exact because and . A neat consistency check.
Level 5 — Mastery
L5.1
A device requires the conduction-edge occupation to be larger than its intrinsic value. Keeping fixed in the Boltzmann regime, by what factor must change? Take the intrinsic case (from L4.1) and assume Boltzmann validity.
Recall Solution
WHY Boltzmann: , so safely (L3.3 justified this). We want , i.e. . Since with the numerator fixed at eV: Factor on : . So raising from K to about K multiplies the conduction occupation ~. Small temperature change, big occupation change — the exponential is fierce.
L5.2
Open reasoning. At K the parent note says becomes a perfect step. Using limits, show why below and above, and explain what happens exactly at in the limit.
Recall Solution
WHY limits: "" cannot be plugged in directly ( divides by zero inside the exponent), so we take the limit . Write .
- Below (): numerator negative, and makes . Then , so . Fully occupied.
- Above (): numerator positive, , , so . Empty.
- Exactly at (): the numerator is exactly zero for every , so at all , giving throughout the limit. The single point survives; the two limits above approach from either side, producing the discontinuous step with the mid-value pinned at . The figure below shows three curves ( high → low) collapsing onto the step, all pivoting through .

Connections
- Fermi level and Fermi-Dirac distribution — parent note with the derivation.
- Carrier concentration n and p — where Boltzmann (L3.3, L5.1) actually gets used.
- Intrinsic and extrinsic semiconductors — L4.1's mid-gap and .
- Density of states — why alone is not a count (L4 trap).
- Chemical potential and equilibrium — flat at equilibrium.