⏱ 90 minutes60 marksprintable — key stays hidden on paper
Level: 5 — Mastery (cross-domain: math + physics + coding, build/prove)
Time limit: 90 minutes
Total marks: 60
Constants (use as needed):kB=1.381×10−23J/K=8.617×10−5eV/K, q=1.602×10−19C.
For Si at 300K: ni=1.0×1010cm−3, Eg=1.12eV, Nc=2.8×1019cm−3, Nv=1.04×1019cm−3.
(a) Starting from the Fermi–Dirac distribution
f(E)=1+e(E−EF)/kBT1,
prove that under the Boltzmann (non-degenerate) approximation the equilibrium electron and hole concentrations reduce to
n=Nce−(Ec−EF)/kBT,p=Nve−(EF−Ev)/kBT,
stating clearly the condition on (Ec−EF) and (EF−Ev) that justifies the approximation. (6)
(b) Hence derive the mass-action law np=ni2 and show that
ni=NcNve−Eg/2kBT,Eg=Ec−Ev.
Explain physically why np is independent of the doping. (5)
(c) Derive an expression for the intrinsic Fermi levelEi relative to the mid-gap, i.e. show
Ei=2Ec+Ev+2kBTln(NcNv),
and compute the offset of Ei from mid-gap for Si at 300K in meV. State toward which band Ei shifts. (5)
(d) A Si sample is doped with ND=1×1017cm−3 donors (fully ionised). Compute n, p, and the position of EF relative to Ei (in eV) at 300K. Identify majority and minority carriers. (6)
(a) Define drift current density and diffusion current density for electrons and write the total electron current densityJn as one expression in terms of E-field, n, and dn/dx. (4)
(b) Consider a semiconductor in thermal equilibrium (zero net current) with a non-uniform doping that produces a built-in field E(x)=−dxdV. Using Jn=0 and n(x)=nie(EF−Ei)/kBT, prove the Einstein relationμnDn=qkBT.
Show every step, including where the equilibrium condition (constant EF) enters. (8)
(c) For Si at 300K with μn=1350cm2/V⋅s, compute Dn. A linear electron concentration profile drops from n(0)=1×1016 to n(1μm)=1×1015cm−3. Compute the diffusion current densityJn,diff (state magnitude and direction of conventional current). (5)
(d) Explain, using band diagrams and the equilibrium result of (b), why a non-uniformly doped semiconductor with no external bias carries zero net current despite having both a concentration gradient and an internal field. (3)
(a) For an intrinsic semiconductor, show that
ln(T3/2ni)=const−2kBEg⋅T1,
given Nc,Nv∝T3/2. Explain how a plot of ln(ni/T3/2) vs 1/T yields Eg. (5)
(b) A doped semiconductor (ND=1015cm−3) shows three temperature regimes: freeze-out, extrinsic (saturation), and intrinsic. Sketch and labellog10(n) vs 1/T, and explain the dominant physics in each regime and the transition to intrinsic behaviour when ni(T)≳ND. (6)
(c) Write a Python function (using NumPy) n_majority(T, ND, Nc300, Nv300, Eg) that returns the electron concentration in an n-type sample assuming complete ionisation, using
n=2ND+(2ND)2+ni(T)2,
with Nc(T)=Nc,300(T/300)3/2, Nv analogously, and ni(T)=NcNve−Eg/2kBT. Then state the two limiting values your function returns when ni≪ND and when ni≫ND. (7)
(a) (6 marks)
Electron density: n=∫Ec∞gc(E)f(E)dE. For (E−EF)≫kBT (i.e. EF several kBT below Ec), the "+1" is negligible:
f(E)≈e−(E−EF)/kBT.(2)
Integrating the parabolic band DOS with this Boltzmann tail gives the standard effective-DOS result:
n=Nce−(Ec−EF)/kBT.(2)
For holes, 1−f(E)=1+e(EF−E)/kBT1≈e−(EF−E)/kBT for (EF−E)≫kBT, giving
p=Nve−(EF−Ev)/kBT.(2)
Condition: Ec−EF≫kBTandEF−Ev≫kBT (Fermi level well inside gap; non-degenerate). (condition stated within marks)
(b) (5 marks)
Multiply:
np=NcNve−(Ec−EF)/kBTe−(EF−Ev)/kBT=NcNve−(Ec−Ev)/kBT=NcNve−Eg/kBT.(2)EF cancels → RHS depends only on material + T, not doping. (1)
For intrinsic material n=p=ni, so ni2=NcNve−Eg/kBT → ni=NcNve−Eg/2kBT. (1)
Since np has no EF-dependence it equals its intrinsic value ni2 for any doping (as long as non-degenerate) → np=ni2. Physically, more electrons enhance recombination and suppress holes in exact proportion. (1)
(c) (5 marks)
Intrinsic: n=p: Nce−(Ec−Ei)/kBT=Nve−(Ei−Ev)/kBT. (2)
Take ln: lnNc−kBTEc−Ei=lnNv−kBTEi−Ev. Solve for Ei:
Ei=2Ec+Ev+2kBTlnNcNv.(2)
Offset =2kBTln(Nv/Nc)=20.02585ln(1.04×1019/2.8×1019) eV =0.012925×ln(0.3714)=0.012925×(−0.9905)=−0.0128 eV ≈−12.8meV.
Negative ⇒ Ei lies below mid-gap (toward valence band, since Nv<Nc). (1)
(a) (4 marks)
Drift: Jn,drift=qnμnE(1). Diffusion: Jn,diff=qDndxdn(1) (positive because electrons carry −q and flow opposite to their particle flux). Total:
Jn=qnμnE+qDndxdn.(2)
(b) (8 marks)
Set Jn=0: qnμnE+qDndxdn=0. (1)
With n=nie(EF−Ei)/kBT, differentiate:
dxdn=n⋅kBT1(dxdEF−dxdEi).(2)
Equilibrium ⇒ EF constant ⇒ dEF/dx=0. (1)Ei tracks the band edges/electrostatic potential: Ei=const−qV(x) so dxdEi=−qdxdV=qE (with E=−dV/dx). (1)
Thus dxdn=n⋅kBT−qE. (1)
Substitute into Jn=0:
qnμnE+qDn(kBT−qnE)=0⇒μn=kBTqDn⇒μnDn=qkBT.(2)
(c) (5 marks)Dn=μn⋅qkBT=1350×0.02585=34.9cm2/s. (2)
Gradient: dxdn=1×10−4cm1015−1016=10−4−9×1015=−9×1019cm−4. (1)Jn,diff=qDndxdn=1.602×10−19×34.9×(−9×1019)=1.602×10−19×(−3.141×1021)=−503A/cm2. (1)
Magnitude ≈5.0×102A/cm2; sign negative ⇒ conventional current flows in −x direction (electrons diffuse from high to low n, i.e. +x, so conventional current is −x). (1)
(d) (3 marks)
Band diagram: non-uniform doping bends the bands so that EF stays flat (horizontal) across the sample. (1) The built-in field pushes electrons one way (drift); the concentration gradient drives diffusion the other way. (1) In equilibrium these are exactly equal and opposite (the Einstein relation guarantees cancellation for each carrier), giving J=0; a flat EF is the signature of equilibrium/zero net current. (1)
(a) (5 marks)ni=NcNve−Eg/2kBT with Nc,Nv∝T3/2 ⇒ NcNv∝T3/2. (2)
So ni=CT3/2e−Eg/2kBT ⇒ T3/2ni=Ce−Eg/2kBT. (1)
Take ln: ln(ni/T3/2)=lnC−2kBEg⋅T1. (1)
A plot vs 1/T is linear with slope −Eg/2kB; multiply slope by −2kB to extract Eg. (1)
(b) (6 marks)
Curve shape (3 regions) correctly ordered on logn vs 1/T (increasing 1/T to the right): (2)
Freeze-out (high 1/T, low T): donors not fully ionised; n rises steeply with T as electrons are thermally released from donor levels (∝e−ED/2kBT-type). (1.5)
Extrinsic/saturation (mid range): all donors ionised, ni≪ND, so n≈ND ≈ constant (flat plateau). (1.5)
Intrinsic (low 1/T, high T):ni(T) grows exponentially; once ni≳ND, n→ni and rises steeply again (slope −Eg/2kB). (1)