Time: 60 minutes Total marks: 60
Instructions: Answer all questions. No hints given. Use standard constants: h=6.626×10−34Js, ℏ=1.055×10−34Js, kB=1.381×10−23JK−1, c=2.998×1010cms−1, NA=6.022×1023mol−1, F=96485Cmol−1, R=8.314Jmol−1K−1.
A conjugated dye electron is modelled as a particle confined in a 1-D box of length L.
(a) Using the trial function ϕ(x)=x(L−x) on the interval [0,L] (which vanishes at both walls), apply the variational principle to estimate the ground-state energy. Show that Etrial=mL25ℏ2. (7)
(b) Compare this to the exact ground-state energy E1=2mL2π2ℏ2. Compute the percentage error. (3)
(c) The dye absorbs at λ=620nm for a transition n=1→n=2. Treating the electron mass as me=9.109×10−31kg, determine the box length L in nm. (4)
For gaseous 12C16O: rotational constant B=1.931cm−1, vibrational wavenumber ν~=2143cm−1.
(a) Compute the bond length (in pm). The reduced mass of CO is μ=1.139×10−26kg. (4)
(b) At T=300K, estimate the rotational partition function qrot=σhcBkBT (symmetry number σ=1). (4)
(c) Compute the vibrational partition function qvib (measured from the ground vibrational level) at 300K, and state whether vibration contributes significantly to CV,m at this temperature. Justify. (6)
Q3. (Surface chemistry) [10 marks]
Adsorption of a gas on a catalyst follows the Langmuir isotherm θ=1+KpKp.
(a) Two data points are measured: at p1=20kPa, θ1=0.40; at p2=60kPa, θ2=0.60. Determine whether these data are consistent with a single Langmuir constant K. Show your working with the two implied K values. (6)
(b) A student instead fits the low-coverage data to a Freundlich isotherm θ=cp1/n. Given θ=0.10 at p=5kPa and θ=0.20 at p=20kPa, find the exponent 1/n. (4)
Q4. (Advanced electrochemistry) [12 marks]
For an electrode reaction the Tafel equation (anodic branch) is η=a+blog10j, with transfer coefficient αa=0.5 at T=298K and n=1.
(a) Derive the Tafel slope b (in mV per decade) from the Butler–Volmer equation in its high-overpotential limit. (6)
(b) A current density of j=10mAcm−2 requires an overpotential η=120mV. Find the exchange current density j0. (4)
(c) State one physical consequence of a large j0 for an electrocatalyst. (2)
Q5. (Photochemistry + solid-state) [10 marks]
(a) A photochemical reaction is irradiated at λ=400nm with an incident power of 10mW for 60s (all absorbed). 3.5×10−6mol of product forms. Compute the quantum yield Φ. (6)
(b) An intrinsic semiconductor has band gap Eg=1.1eV. Explain qualitatively how its conductivity changes with rising temperature, contrasting this with a metal. (4)
(a)B=8π2cIh (in cm⁻¹ with c in cm/s), I=μr2.
I=8π2cBh=8π2(2.998×1010)(1.931)6.626×10−34=4.574×10126.626×10−34=1.449×10−46kgm2. (2)r=I/μ=1.449×10−46/1.139×10−26=1.272×10−20=1.128×10−10m=112.8pm. (2)
(c)kBThcν~=(1.381×10−23)(300)(6.626×10−34)(2.998×1010)(2143)=4.143×10−214.257×10−20=10.27. (2)qvib=1−e−10.271=1−3.5×10−51≈1.00003≈1.0. (2)
Since qvib≈1, essentially all molecules are in the vibrational ground state; the vibrational mode is "frozen" and contributes negligibly to CV,m at 300 K (need T≳θvib=3084 K). (2)
Point 1: K1=20(0.60)0.40=120.40=0.0333kPa−1. (2)
Point 2: K2=60(0.40)0.60=240.60=0.0250kPa−1. (2)K1=K2 (0.0333 vs 0.0250, ~25% difference), so the data are not consistent with a single Langmuir constant — the simple Langmuir model does not describe both points. (1)
(a) Butler–Volmer: j=j0[eαafη−e−αcfη], f=RTF.
High anodic overpotential: second term negligible, j=j0eαafη. (2)lnj=lnj0+αafη⇒η=αaFRTlnj0j. (2)
In base-10: η=αaF2.303RTlog10j0j, so
b=αaF2.303RT=0.5(96485)2.303(8.314)(298)=48242.55706.6=0.1183V=118mV/decade. (2)
(c) Large j0 ⇒ facile electron transfer, so the same current is delivered at much lower overpotential (lower energy loss / higher efficiency — a better electrocatalyst). (2)
(a) Photon energy E=λhc=400×10−9(6.626×10−34)(2.998×108)=4.966×10−19J. (1)
Total energy absorbed =Pt=(0.010)(60)=0.60J. (1)
Photons =0.60/4.966×10−19=1.208×1018. Moles of photons =1.208×1018/6.022×1023=2.006×10−6mol. (2)Φ=mol photonsmol product=2.006×10−63.5×10−6=1.74. (2)
(Φ>1 ⇒ a chain/secondary process amplifies product beyond the Stark–Einstein 1:1 limit.)
(b) In an intrinsic semiconductor, raising T thermally promotes more electrons across the gap (n∝e−Eg/2kBT), increasing carrier concentration and hence conductivity — conductivity rises with T. In a metal, carrier concentration is fixed; increased lattice vibrations enhance scattering, so conductivity falls with T. Opposite temperature dependences. (4)
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