2.4.13 · Hardware › Transistors: BJT & FET
Transconductance batata hai ki ek transistor ki input voltage uske output current ko kitni strongly control karti hai . Yeh device ka "gain knob" hai — bada g m matlab input voltage mein thodi si wiggle se output current mein badi wiggle aati hai. Yahi cheez ek transistor ko amplifier banati hai.
Definition Transconductance
Transconductance g m hai output current mein change per unit change in controlling input voltage , ek fixed operating (bias) point par evaluate ki gayi:
g m ≡ ∂ V in ∂ I o u t Q
BJT ke liye: I o u t = I C , V in = V B E , toh g m = ∂ V B E ∂ I C .
FET (MOSFET) ke liye: I o u t = I D , V in = V GS , toh g m = ∂ V GS ∂ I D .
Units: siemens (S) ya amps-per-volt (A/V). Kabhi kabhi mho (℧ ) ya mA/V mein bhi batate hain.
WHY ek slope (derivative) na ki ratio? Kyunki transistor nonlinear hota hai. I C vs V B E ek exponential curve hai. Small signals ke liye hume sirf bias point Q par local slope ki parwah hai — yahi woh effective gain hai jo tiny AC signal actually experience karta hai.
g m = I C / V T magical kyun hai
Do alag BJTs jo same collector current par biased hain unka same transconductance hoga. Device ki details cancel ho jaati hain! BJT ko 1 mA par bias karo → g m = 1 mA /25.9 mV ≈ 38.6 mS, har baar.
Intuition BJT vs FET current ke saath scaling
BJT: g m ∝ I C (linear).
MOSFET: g m ∝ I D (square-root).
Toh bias current ke har amp par, BJT zyada transconductance deta hai . Yahi classic reason hai ki BJTs high-gain, low-power analog stages mein jeet jaate hain.
Worked example Example 1 — BJT at 2 mA
I C = 2 mA , T = 300 K (V T = 25.9 mV) par biased BJT ke liye g m nikalo.
g m = V T I C = 25.9 × 1 0 − 3 2 × 1 0 − 3 = 77.2 mS
Yeh step kyun? g m = I C / V T ka direct application; β ya I S ki zaroorat nahi.
Agar R L = 5 k Ω se load karo: A v = − g m R L = − 77.2 mS × 5 k Ω = − 386 .
Worked example Example 2 — MOSFET,
g m nikalo
Diya gaya hai k = μ n C o x L W = 2 mA/V 2 , V t h = 0.5 V, V GS = 1.5 V par biased.
Overdrive: V o v = 1.5 − 0.5 = 1.0 V. Kyun? g m = k V o v ko overdrive chahiye.
g m = k V o v = 2 mA/V 2 × 1 V = 2 mS
Current se check karo: I D = 2 k V o v 2 = 1 mA , toh g m = 2 I D / V o v = 2 × 1/1 = 2 mS. ✔
Worked example Example 3 — same current, devices compare karo
Dono I = 1 mA par biased hain. BJT: g m = 1/0.0259 = 38.6 mS. MOSFET with V o v = 0.2 V: g m = 2 I D / V o v = 2 × 1 mA /0.2 = 10 mS.
Compare kyun? Dikhata hai ki BJT yahan ~4× zyada g m deta hai — "BJTs better transconductors hain" wale claim ko quantify karta hai.
g m sirf I C / V B E hai (ek ratio)."
Sahi kyun lagta hai: g m ke units current/voltage hain, toh DC current ko DC voltage se divide karna dimensionally sahi lagta hai .
Fix: g m ek derivative (slope) hai, DC ratio nahi. Kyunki curve exponential hai, Q par slope I C / V T hai — aur V T ≈ 26 mV, V B E ≈ 0.7 V ke comparison mein bahut chhota hai. I C / V B E use karne se g m ~27× kam estimate hoti hai.
Common mistake "Bada overdrive
V o v matlab hamesha bada g m ."
Sahi kyun lagta hai: g m = k V o v barhta hai V o v ke saath.
Fix: Fixed drain current ke liye, g m = 2 I D / V o v — V o v badhane se g m ghatta hai ! g m gain tab hi milta hai jab V o v badhao aur I D bhi badhne do. Design tradeoff: low V o v → high g m /current efficiency lekin kam headroom.
Common mistake "MOSFET aur BJT
g m current ke saath same tarah scale karte hain."
Sahi kyun lagta hai: dono mein "zyada current → zyada g m ."
Fix: BJT linear hai (g m ∝ I C ); MOSFET square-root hai (g m ∝ I D ). Current double karne se BJT g m double hoti hai lekin MOSFET ke liye sirf × 1.41 hoti hai.
Recall Quick self-test (answers chhupao)
g m words mein kya hai? → bias point par output current vs input control voltage ka slope.
BJT formula? → I C / V T .
MOSFET ke teen forms? → k V o v = 2 I D / V o v = 2 k I D .
I C / V T kyun, I C / V B E kyun nahi? → I C = I S e V B E / V T ka derivative 1/ V T neeche le aata hai.
CE/CS stage ka gain? → − g m R L .
Recall Feynman: 12-saal ke bachche ko samjhao
Socho ek garden ka naal (tap). Handle thoda sa ghoomana input voltage hai. Kitna extra paani aata hai woh output current hai. Transconductance hai handle thoda ghoomane par paani kitna uchhalata hai . Ek "sensitive" naal (bada g m ) halke se ghoomane par bahut paani uchhaalta hai — yahi accha amplifier hai. Transistor ek jaadu ka naal hai jahan handle par ek phusphusahat ek fire-hose ko control karti hai, aur g m naapata hai ki woh jaadu kitna sensitive hai.
"gm = I over VT, twenty-six milli-volt tea." (g m = I C / V T , aur V T ≈ 26 mV — "tea" thermal voltage V T ke liye.) FET ke liye: "gm equals two-I-D over overdrive."
BJT Small-Signal Model — g m dependent current source g m v b e hai.
Thermal Voltage VT — 25.9 mV kahan se aata hai (k T / q ).
MOSFET Square-Law and Saturation — I D = 2 k V o v 2 ka source.
Common-Emitter Amplifier / Common-Source Amplifier — gain = − g m R L .
Overdrive Voltage Vov — FETs mein g m /current tradeoff control karta hai.
Early Effect and Output Resistance ro — g m ke saath combine hokar intrinsic gain g m r o deta hai.
Transconductance g m define karo Slope ∂ I o u t / ∂ V in bias point par — controlling input voltage mein unit change per output current mein change. Units: siemens (A/V).
BJT transconductance formula g m = I C / V T , jahan V T = k T / q ≈ 25.9 mV.
BJT g m = I C / V T kyun hai, I C / V B E kyun nahi? g m , I C = I S e V B E / V T ka derivative hai; differentiate karne par 1/ V T neeche aata hai, aur exponential wapas I C ban jaata hai.
MOSFET g m (teen equivalent forms) g m = k V o v = 2 I D / V o v = 2 k I D , jahan
k = μ n C o x W / L ,
V o v = V GS − V t h .
g m bias current ke saath kaise scale karta hai?BJT: linear (
∝ I C ). MOSFET: square-root (
∝ I D ).
CE/CS stage ka small-signal voltage gain A v = − g m R L (inverting).
Fixed I D par, V o v badhane ka g m par kya effect hota hai? g m = 2 I D / V o v ghatta hai — zyada overdrive se constant current par transconductance kam hoti hai.
Bias ke har amp par zyada g m kaun deta hai, BJT ya FET? BJT (denominator mein tiny V T ≈ 26 mV ki wajah se).